| ‘1950s |
| 56 |
- Establishment of a transistor manufacturing facility at Kawasaki Plant
- Launch of the first silicon transistor
|
|
| 57 |
- ‘Completion of FACOM222, Japan’s largest mainframe computer
|
|
| ‘1960s |
| 63 |
- Focus on the development of IC for computers such as TTL based on silicon semiconductor technology
|
|
| 66 |
- Completion of Japan’s first clean room for manufacturing semiconductor at Kawasaki Plant
Commenced prototype IC making
|
|
| 67 |
- In October, Aizu fab was established in Fukushima Pref
- In November, the production of audio device and diode started
|
|
| 68 |
- Completion of FACOM230-60, the world’s first IC-based computer
|
|
| ‘1970s |
| 70 |
- Development of Ni-Cr thin-film Hybrid IC
- Aizu fab started production of IC
|
|
| 76 |
- Establishment of fine processing technology of Memories for computers (64Kb/256Kb-DRAM)
|
|
| 79 |
- Sales of CMOS gate array was commenced
|
|
| ‘1980s |
| 80 |
- In May, Iwate fab was established and started production of 64Kb-DRAM in 1981
|
|
- Successfully launched HEMT (High Electron Mobility Transistor)
|
|
| 81 |
- The world’s first 64Kb-DRAM was loaded on FM-8, personal computer
|
|
| 83 |
- Announcement of the world’s first CMOS 256Kb-EPROM
|
|
| 84 |
- In October, Wakamatsu fab was established and started production of G/A, S/C, linear and others
|
- In October, Mie plant was established and started operation of Fab-1 (150mm) for prototypes and mass production of large scale memory and large gate-array
|
| 85 |
|
- First shipment of EPROM Products
|
| 88 |
- In May, Fujitsu AMD Semiconductor Limited (FASL) was established
- -In October, Gresham fab was established in U.S. and started production of 256Kb-DRAM and 1Mb-DRAM in 1989
|
- In September, Fab-2 (150mm) started operation
|
| ‘1990s |
| 91 |
- In November, Durham fab was established in U.K. and its first 4Mb-DRAM was shipped in 1992
|
- In July, Fab-3 (200mm) started operation.
|
| 92 |
- Establishment of the world’s first mass production fab for GaAs IC in Japan
- Development of the world’s first CMOS based vector processing LSI (Super computer’s operation function is in one chip)
|
|
| 95 |
- Development of SPARC64, high performance processor
|
- Mie Plant was certified to ISO9001（1994 Version)
|
| 96 |
- Development of lithography technology which uses ArF excimer laser
Realization of the world’s first pattern formation based on 0.13um rule
|
- Mie Plant was certified to ISO14001（1996 Version
|
| 98 |
|
- Fab-2 changed to 200mm from 150mm
|
| 99 |
- Development of VLIW processor, “FR-V family” as the core of system LSI products
|
|
| ‘2000s |
| 00 |
- Opening of AkirunoTechnology Center
- Establishment of an integrated system of development, design and prototype of leading-edge devices
|
|
| 03 |
- Establishment of Fujitsu Integrated Microtechnology Limited (FIM), back-end assembly and test house
|
|
| 04 |
- FPGA’s foundry agreement with Lattice Semiconductor (U.S.)
- Fujitsu group acquired the integrated ISO 14001 (1996) certification
|
- Completion of new 300mm wafer manufacturing fab (Fab-B1) at Mie Plant
|
| 05 |
- Earned the 51th Okochi Memorial Award for “Development and Implementation of Multi-giga-bit CMOS High-speed I/O”
- Development of world’s first baseband LSI for WiMAX with multiple uses for base stations and mobile devices
|
- Fab-B1 started production of 90nm products in April
|
| |
- In September, initial introduction of NAS battery
|
| 06 |
- Fujitsu Group (World Wide) acquired the integrated ISO 14001 (2004) certification
|
- Establishment of 2nd 300mm manufacturing fab (Fab-B2)
|
| |
- In September, concluded a license agreement with MoSys Inc. to use “IT-SRAM®”, an embedded memory technology, based on 65nm process
|
| 07 |
|
- Fab-B2 started production of 65nm products
|
| 08 |
- On March 21st, Fujitsu Microelectronics Limited (currently Fujitsu Semiconductor Limited), a spinoff of Fujitsu’s LSI business unit, was established
|
 |
| |
- In August, ISO/TS16949 was certified
|
| 09 |
- Announcement of outsourcing 40nm logic IC to TSMC and collaboration on leading-edge technologies of 28nm and beyond with TSMC
|
|
| |
- The headquarter of MIFS relocated to Shin-Yokohama Central Building (JR Station Building)
|
| ‘2010s |
| 10 |
- On April 1st, changed its company name to Fujitsu Semiconductor Limited
|
- Production start of LSI for Supercomputer “K”
|
| 11 |
- Comprehensive license agreement with ARM
- Consolidation of two design subsidiaries
|
|
- Fujitsu Semiconductor Limited received a license of “PowerShrink™”, low-power consumption CMOS technology from SuVolta (U.S.) and commenced joint development for commercialization
|
|
| 12 |
- Transferred Iwate Fab to Denso Corporatio
- Transferred back-end facilities of Fujitsu Integrated Microtechnology (FIM) to J-Devices Corporation
|
|
| 13 |
- Transferred MCU and Analog business to Spansion (currently Cypress)
|
|
| |
- In April, LNG satellite base was installed in the factory
|
| |
- In September, mass production of DDC transistors based products started
|
| |
- In December, developed manufacturing technology to embed Flash memory cell in logic circuit with DDC technology
|
| 14 |
- Integration of Fujitsu’s GaN power device business with Transphorm, Inc. (U.S.)
|
|
- In August, announced spinoff of Mie fab and Aizu fab as independent foundry companies and 40nm technology license agreement with UMC (Taiwan).
|
- In December, Mie Fujitsu Semiconductor Limited was established with capital participation by UMC (Taiwan)
 |
| 15 |
|
- In April, MIFS acquired IPR (intellectual property right) of ultra low power technology from SuVolta
|
| |
- In November, a new clean room adopted SWIT（Swirling Induction Type HVAC system）
|
| 16 |
|
- In April, MIFS announced partnership with Kilopass in the field of technology development
|
| |
- In April, MIFS made an announcement of combining Deeply Depleted Channel (DDC) and near/sub-threshold technologies to reduce energy
|
| |
- In August, MIFS and FSL announced an agreement with US-based Nantero, Inc. to license that company’s technology for NRAM, non-volatile RAM using carbon nanotubes, and to conduct joint development
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